FQPF7N65C
MOSFET N-CH 650V 7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF7N65C is a 650V N-channel Power MOSFET designed for high-efficiency switching applications. This component, presented in a TO-220F-3 package for through-hole mounting, features a continuous drain current (Id) of 7A at 25°C and a maximum power dissipation (Pd) of 52W (Tc). With a low on-resistance (Rds On) of 1.4 Ohm at 3.5A and 10V Vgs, it minimizes conduction losses. The FQPF7N65C exhibits a gate charge (Qg) of 36 nC at 10V and an input capacitance (Ciss) of 1245 pF at 25V. Its operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1245 pF @ 25 V |
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