FQPF7N60
MOSFET N-CH 600V 4.3A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF7N60 is a QFET® series N-Channel Power MOSFET designed for robust performance. This through-hole component features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.3 A at 25°C. With a maximum on-resistance (Rds On) of 1 Ohm at 2.2 A and 10 V gate-source voltage, it offers efficient power switching. The device has a maximum power dissipation of 48 W (Tc) and a gate charge (Qg) of 38 nC at 10 V. Its input capacitance (Ciss) is 1430 pF at 25 V. The TO-220F-3 package is suitable for applications in power supply units, lighting, and general purpose power switching across various industrial sectors. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30 V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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