FQPF7N10L
MOSFET N-CH 100V 5.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FQPF7N10L is an N-Channel Power MOSFET from the QFET® series. This through-hole component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 5.5 A at 25°C. With a maximum power dissipation of 23 W (Tc), it offers a low on-resistance (Rds On) of 350 mOhm at 2.75 A and 10 V. Key specifications include a gate charge (Qg) of 6 nC at 5 V and input capacitance (Ciss) of 290 pF at 25 V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is supplied in a TO-220F-3 package. This MOSFET is suitable for applications in power supply units, motor control, and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V |
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