FQPF6N90CT
MOSFET N-CH 900V 6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQPF6N90CT is a high-voltage N-Channel Power MOSFET designed for demanding power applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 6A at 25°C. With a maximum power dissipation of 56W (Tc) and a low on-resistance (Rds On) of 2.3 Ohm at 3A and 10V Vgs, it offers efficient switching performance. The FQPF6N90CT utilizes a TO-220F-3 through-hole package, suitable for robust mounting. Key electrical characteristics include a gate charge (Qg) of 40nC (Max) at 10V and input capacitance (Ciss) of 1770pF (Max) at 25V. This MOSFET is utilized in power supply, lighting, and industrial motor control sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |