FQPF6N90C
MOSFET N-CH 900V 6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF6N90C is an N-Channel Power MOSFET from the QFET® series, designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) capability of 6 A at 25°C, with a maximum power dissipation of 56 W (Tc). The Rds On is rated at a maximum of 2.3 Ohm at 3 A and 10 V Vgs. Key parameters include a typical gate charge (Qg) of 40 nC at 10 V and an input capacitance (Ciss) of 1770 pF at 25 V. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220F-3 through-hole package. This device is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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