FQPF6N90
MOSFET N-CH 900V 3.4A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF6N90 is a 900V N-Channel Power MOSFET designed for high-voltage applications. This through-hole component, housed in a TO-220F-3 package, offers a continuous drain current of 3.4A (Tc) and a maximum power dissipation of 56W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 900V, a maximum on-resistance (Rds On) of 1.9Ohm at 1.7A and 10V gate drive, and a gate charge (Qg) of 52 nC at 10V. With an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power supply units, lighting, and industrial motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V |
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