FQPF6N80CT
MOSFET N-CH 800V 5.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF6N80CT is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source breakdown voltage (Vdss) of 800 V and a continuous drain current (Id) capability of 5.5 A at 25°C. The FQPF6N80CT offers a maximum on-resistance (Rds On) of 2.5 Ohms at 2.75 A and 10 V gate drive. With a gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 1310 pF at 25 V, it is suitable for demanding switching applications. The device is packaged in a TO-220F-3 through-hole configuration and has a maximum power dissipation of 51 W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in industries such as power supply, lighting, and industrial motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 25 V |
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