FQPF6N80C
MOSFET N-CH 800V 5.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF6N80C is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 5.5A (Tc) at 25°C. This component features a maximum power dissipation of 51W (Tc) and a low on-resistance (Rds On) of 2.5 Ohm maximum at 2.75A, 10V. The gate charge (Qg) is specified at 30 nC maximum at 10V, with input capacitance (Ciss) of 1310 pF maximum at 25V. The FQPF6N80C utilizes Metal Oxide technology and is housed in a TO-220F-3 through-hole package, suitable for applications in power supply, lighting, and industrial control. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 25 V |
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