FQPF6N15
MOSFET N-CH 150V 5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF6N15 is a 150V N-Channel Power MOSFET designed for efficient switching applications. This component features a continuous drain current (Id) of 5A at 25°C and a maximum power dissipation of 38W (Tc). The drain-to-source voltage (Vdss) is 150V, with a gate-to-source voltage (Vgs) tolerance of ±25V. Key electrical characteristics include a maximum on-resistance (Rds On) of 600mOhm at 2.5A and 10V, and a typical gate charge (Qg) of 8.5 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 270 pF at 25V. This device is housed in a TO-220F-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 175°C (TJ). The FQPF6N15 is utilized in various industrial applications, including power supplies and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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