FQPF65N06
MOSFET N-CH 60V 40A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF65N06 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 40A at 25°C (Tc), with a maximum power dissipation of 56W (Tc). Its low on-resistance (Rds On) of 16mOhm at 20A and 10V gate-source voltage (Vgs) minimizes conduction losses. The device offers a gate charge (Qg) of 65 nC (Max) at 10V and an input capacitance (Ciss) of 2410 pF (Max) at 25V, facilitating fast switching speeds. Operating across a wide temperature range from -55°C to 175°C (TJ), it is packaged in a TO-220F-3 (Full Pack) configuration for through-hole mounting. This MOSFET is suitable for industrial power supplies, motor control, and automotive applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 25 V |
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