FQPF5N60C
MOSFET N-CH 600V 4.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF5N60C is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a low on-resistance of 2.5Ohm maximum at 2.25A and 10V Vgs. With a continuous drain current of 4.5A (Tc) and a maximum power dissipation of 33W (Tc), it is suitable for demanding power conversion tasks. The device offers a gate charge of 19 nC at 10V and an input capacitance of 670 pF at 25V. Packaged in a TO-220F-3 configuration for through-hole mounting, the FQPF5N60C operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in switch mode power supplies, lighting, and power factor correction circuits.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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