FQPF5N50CT
MOSFET N-CH 500V 5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF5N50CT is a 500V N-Channel Power MOSFET designed for efficient switching applications. This component features a continuous drain current capability of 5A at 25°C, with a maximum on-resistance of 1.4 Ohm at 2.5A and 10V Vgs. The device offers a gate charge of 24 nC (typical) at 10V, and an input capacitance (Ciss) of 625 pF (maximum) at 25V. Packaged in a TO-220F-3 (Full Pack) for through-hole mounting, this MOSFET dissipates up to 38W. Its robust construction and operating temperature range of -55°C to 150°C make it suitable for use in power supplies, motor controls, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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