FQPF50N06L
MOSFET N-CH 60V 32.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF50N06L is an N-Channel Power MOSFET designed for high-performance applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 32.6 A at 25°C. With a low on-resistance (Rds On) of 21 mOhm at 16.3 A and 10 Vgs, it minimizes conduction losses. The device boasts a gate charge (Qg) of 32 nC at 5 V and an input capacitance (Ciss) of 1630 pF at 25 V. It is packaged in a TO-220F-3 for through-hole mounting and offers a maximum power dissipation of 47 W. Operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 16.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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