FQPF50N06
MOSFET N-CH 60V 31A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF50N06 is a QFET® series N-Channel MOSFET designed for demanding applications. This component offers a 60V drain-source breakdown voltage and a continuous drain current capability of 31A at 25°C (Tc). With a low on-resistance of 22mOhm maximum at 15.5A and 10V Vgs, it minimizes conduction losses, making it suitable for power switching. The device features a typical gate charge of 41nC and an input capacitance of 1540pF, facilitating efficient switching. Packaged in a TO-220F-3 through-hole configuration, it provides a thermal resistance suitable for managing up to 47W of power dissipation. The FQPF50N06 operates across a wide temperature range of -55°C to 175°C, finding utility in power supplies, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 15.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 25 V |
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