FQPF4N25
MOSFET N-CH 250V 2.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQPF4N25 is a QFET® N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 2.8 A at 25°C. The Rds On is specified at a maximum of 1.75 Ohms with an Id of 1.4 A and Vgs of 10 V. With a Gate Charge (Qg) of 5.6 nC at 10 V and Input Capacitance (Ciss) of 200 pF at 25 V, it offers robust switching characteristics. The device supports a Gate-Source Voltage (Vgs) range of ±30 V and a threshold voltage (Vgs(th)) of 5 V at 250 µA. This through-hole component is housed in a TO-220F-3 package, providing a maximum power dissipation of 32 W. It is suitable for use in various industries including consumer electronics, industrial automation, and power supplies. Operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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