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FQPF45N15V2

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FQPF45N15V2

MOSFET N-CH 150V 45A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FQPF45N15V2 is a QFET® series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 45A at 25°C. With a maximum On-Resistance (Rds On) of 40mOhm at 22.5A and 10V, it offers low conduction losses. The device boasts a low gate charge (Qg) of 94 nC at 10V and an input capacitance (Ciss) of 3030 pF at 25V, facilitating fast switching speeds. It supports a gate drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±30V. The maximum power dissipation is 66W at 25°C (Tc). This through-hole component is housed in a TO-220F-3 package, suitable for industrial and automotive power management systems.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 22.5A, 10V
FET Feature-
Power Dissipation (Max)66W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3030 pF @ 25 V

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