FQPF44N10
MOSFET N-CH 100V 27A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF44N10 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V Drain-Source Voltage (Vdss) and can handle a continuous drain current of 27A at 25°C (Tc). With a maximum power dissipation of 55W (Tc), it is suitable for power management solutions in sectors such as industrial automation, automotive systems, and consumer electronics. The FQPF44N10 offers a low on-resistance of 39mOhm at 13.5A and 10V gate drive, minimizing conduction losses. Key parameters include a gate charge (Qg) of 62nC at 10V and input capacitance (Ciss) of 1800pF at 25V. Packaged in a TO-220F-3 through-hole configuration, this MOSFET operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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