FQPF3N25
MOSFET N-CH 250V 2.3A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQPF3N25 is a QFET® series N-Channel Power MOSFET. This component features a drain-to-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 2.3 A at 25°C. The on-resistance (Rds On) is a maximum of 2.2 Ohms at 1.15 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 5.2 nC at 10 V and an input capacitance (Ciss) of 170 pF at 25 V. Maximum power dissipation is 27 W at the case temperature. The device is housed in a TO-220F-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power supply designs, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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