FQPF33N10
MOSFET N-CH 100V 18A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQPF33N10 is a 100V N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a low Rds(on) of 52mOhm at 9A and 10V Vgs, this component offers minimal conduction losses. Its continuous drain current capability is 18A (Tc) with a maximum power dissipation of 41W (Tc). The device exhibits a gate charge of 51 nC at 10V and an input capacitance (Ciss) of 1500 pF at 25V. Operating across a wide temperature range from -55°C to 175°C, the FQPF33N10 is housed in a TO-220F-3 package suitable for through-hole mounting. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications where robust performance and thermal management are critical.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
