FQPF2NA90
MOSFET N-CH 900V 1.7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQPF2NA90 is a QFET® series N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 1.7A at 25°C. Its on-resistance (Rds On) is specified as a maximum of 5.8 Ohms at 850mA and 10V gate drive. Key parameters include a maximum power dissipation of 39W (Tc) and a gate charge (Qg) of 20 nC at 10V. The input capacitance (Ciss) is 680 pF maximum at 25V. Packaged in a TO-220F-3 through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). It is utilized in power factor correction, switch mode power supplies, and general high-voltage switching applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8Ohm @ 850mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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