FQPF2N80YDTU
MOSFET N-CH 800V 1.5A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF2N80YDTU is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 1.5A at 25°C, with a maximum power dissipation of 35W (Tc). Key electrical characteristics include a maximum On-Resistance (Rds On) of 6.3 Ohms at 750mA and 10V gate drive, and a Gate Charge (Qg) of 15 nC at 10V. The input capacitance (Ciss) is 550 pF at 25V. The device operates over a temperature range of -55°C to 150°C (TJ). It is supplied in a TO-220F-3 (Y-Forming) package, suitable for through-hole mounting. This MOSFET is utilized in power supply designs and other high voltage switching applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 750mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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