FQPF22P10
MOSFET P-CH 100V 13.2A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF22P10 is a P-Channel Power MOSFET designed for high-performance switching applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13.2A at 25°C, this component offers a low On-Resistance (Rds On) of 125mOhm at 6.6A and 10V Vgs. The device is housed in a TO-220F-3 package, suitable for through-hole mounting and dissipating up to 45W. Key parameters include a gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 1500 pF at 25V. Operating across a temperature range of -55°C to 175°C, the FQPF22P10 finds application in power supply units, motor control, and general-purpose power switching within industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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