FQPF20N06L
MOSFET N-CH 60V 15.7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® Series FQPF20N06L is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15.7A at 25°C. With a maximum power dissipation of 30W (Tc), it offers robust performance in moderate thermal environments. The Rds(on) is specified at a maximum of 55mOhm at 7.85A and 10V gate drive. Key characteristics include a gate charge (Qg) of 13nC at 5V and input capacitance (Ciss) of 630pF at 25V. The TO-220F-3 package facilitates through-hole mounting. This MOSFET is suitable for use in power supply, industrial, and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 7.85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 25 V |
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