FQPF19N20CYDTU
MOSFET N-CH 200V 19A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQPF19N20CYDTU is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 19A at 25°C. With a maximum on-resistance (Rds On) of 170mOhm at 9.5A and 10V gate drive, it offers low conduction losses. The maximum power dissipation is 43W (Tc). Key parameters include a gate charge (Qg) of 53 nC at 10V and input capacitance (Ciss) of 1080 pF at 25V. The device operates across a temperature range of -55°C to 150°C. Packaged in a TO-220F-3 (Y-Forming) through-hole configuration, it is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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