FQPF18N50V2
MOSFET N-CH 500V 18A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF18N50V2 is a 500V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 18A at 25°C (Tc) and a maximum power dissipation of 69W (Tc). With a low on-resistance of 265mOhm at 9A and 10V, it minimizes conduction losses. The FQPF18N50V2 has a gate charge of 55 nC at 10V and an input capacitance (Ciss) of 3290 pF at 25V, facilitating efficient switching. Supplied in a TO-220F-3 package for through-hole mounting, this MOSFET is suitable for industrial power supplies, lighting, and motor control systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 265mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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