FQPF17N40
MOSFET N-CH 400V 9.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF17N40 is an N-Channel MOSFET designed for demanding power applications. This through-hole component features a 400V drain-source voltage (Vdss) and a continuous drain current (Id) of 9.5A at 25°C, with a maximum power dissipation of 56W (Tc). Key parameters include a low on-resistance (Rds On) of 270mOhm at 4.75A and 10V, and a gate charge (Qg) of 60nC at 10V. The input capacitance (Ciss) is rated at 2300pF at 25V. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-220F-3 package. This MOSFET is commonly utilized in power supply units, motor control, and lighting solutions.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |