FQPF16N25C
MOSFET N-CH 250V 15.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® series FQPF16N25C is a 250V N-Channel Power MOSFET designed for robust performance in demanding applications. This through-hole component, packaged in a TO-220F-3, offers a continuous drain current of 15.6A at 25°C with a maximum power dissipation of 43W. Key electrical specifications include a drain-to-source voltage (Vdss) of 250V, a maximum on-resistance (Rds On) of 270mOhm at 7.8A and 10V drive, and a typical gate charge (Qg) of 53.5 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1080 pF at 25V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET finds application in power supplies, motor control, and general-purpose switching power applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 53.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |