FQPF16N15
MOSFET N-CH 150V 11.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FQPF16N15 is a QFET® series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 11.6A at 25°C (Tc). The Rds On is specified at a maximum of 160mOhm at 5.8A and 10V gate drive. With a maximum power dissipation of 53W (Tc), it is suitable for demanding power conversion tasks. The device utilizes advanced MOSFET technology and is housed in a TO-220F-3 package for through-hole mounting. Typical applications include power supplies, motor control, and general-purpose power switching in industrial and automotive sectors. Key electrical parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 910 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |