FQPF14N30
MOSFET N-CH 300V 8.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® series FQPF14N30 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 8.5A at 25°C case temperature, with a maximum power dissipation of 50W (Tc). The Rds(On) is specified at a maximum of 290mOhm at 4.25A and 10V gate drive. Key electrical parameters include a Gate Charge (Qg) of 40 nC (max) at 10V and an input capacitance (Ciss) of 1360 pF (max) at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-220F-3 package with a through-hole mounting type. This MOSFET is suitable for use in power supply, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 4.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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