FQPF13N50CSDTU
MOSFET N-CH 500V 13A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF13N50CSDTU is a 500V N-Channel MOSFET designed for general-purpose applications. This component features a continuous drain current of 13A at 25°C (Tc) and a maximum power dissipation of 48W (Tc). With a drain-to-source voltage (Vdss) of 500V and a gate-source voltage (Vgs) range of ±30V, it offers robust performance. The Rds On is specified at a maximum of 480mOhm at 6.5A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 56 nC at 10V and an input capacitance (Ciss) of 2055 pF at 25V. The FQPF13N50CSDTU is housed in a TO-220F-3 package, suitable for through-hole mounting. This device operates across a temperature range of -55°C to 150°C (TJ) and finds application in power supply units, motor controls, and lighting systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2055 pF @ 25 V |