FQPF13N10L
MOSFET N-CH 100V 8.7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF13N10L is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 8.7A at 25°C (Tc). With a maximum power dissipation of 30W (Tc) and a low on-resistance (Rds On) of 180mOhm at 4.35A and 10V, it is suitable for applications requiring reduced conduction losses. The FQPF13N10L utilizes Metal Oxide technology, offering a gate charge (Qg) of 12 nC at 5V and an input capacitance (Ciss) of 520 pF at 25V. It is packaged in a TO-220F-3 configuration for through-hole mounting. This device finds utility in power supply units, motor control, and lighting applications. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 4.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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