FQPF12P20
MOSFET P-CH 200V 7.3A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQPF12P20 is a P-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 7.3A at 25°C. With a maximum power dissipation of 50W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 470mOhm at 3.65A and 10V gate drive, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 40nC at 10V and input capacitance (Ciss) of 1200pF at 25V. The FQPF12P20 utilizes a TO-220F-3 through-hole package, facilitating straightforward board assembly. This MOSFET is commonly employed in power supply units, motor control, and lighting solutions across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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