FQPF12N60CT
MOSFET N-CH 600V 12A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF12N60CT is a 600V N-Channel Power MOSFET in a TO-220F-3 package. This device features a continuous drain current capability of 12A at 25°C (Tc) and a maximum power dissipation of 51W (Tc). With a low on-resistance of 650mOhm at 6A and 10V Vgs, it offers efficient switching. Key parameters include a gate charge of 63nC (Max) at 10V and input capacitance of 2290pF (Max) at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, lighting, and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |