FQPF11P06
MOSFET P-CH 60V 8.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® FQPF11P06 is a P-Channel MOSFET designed for power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 8.6A at 25°C. The Rds On is specified at a maximum of 175mOhm at 4.3A, 10V. With a Gate Charge (Qg) of 17nC at 10V and Input Capacitance (Ciss) of 550pF at 25V, it offers efficient switching characteristics. The device has a maximum power dissipation of 30W (Tc) and operates within a temperature range of -55°C to 175°C. Packaged in a TO-220F-3 (Full Pack) for through-hole mounting, this MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |