FQPF11N40T
MOSFET N-CH 400V 6.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF11N40T is a 400V N-Channel power MOSFET designed for demanding applications. This through-hole component, housed in a TO-220F-3 package, offers a continuous drain current capability of 6.6A at 25°C and a maximum power dissipation of 50W. Featuring a low on-resistance of 480mOhm at 3.3A and 10V, and a gate charge (Qg) of 35nC at 10V, it ensures efficient switching performance. The device boasts a Vgs(th) of 5V at 250µA and can withstand a gate-source voltage of ±30V. With an input capacitance (Ciss) of 1400pF at 25V, it is suitable for use in power supply, lighting, and motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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