FQPF11N40CT
MOSFET N-CH 400V 10.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF11N40CT is a 400V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current of 10.5A (Tc) and a maximum power dissipation of 44W (Tc). With a low Rds(on) of 530mOhm at 5.25A and 10V, it minimizes conduction losses. The TO-220F-3 package facilitates through-hole mounting. Key parameters include a gate charge of 35 nC @ 10V and an input capacitance (Ciss) of 1090 pF @ 25V. This MOSFET is suitable for use in power supplies, lighting, and motor control across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 5.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 25 V |
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