FQPF11N40C
MOSFET N-CH 400V 10.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQPF11N40C, a QFET® series N-Channel Power MOSFET, offers a 400V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.5A at 25°C. This through-hole component features a maximum on-resistance (Rds On) of 530mOhm at 5.25A and 10V gate-source voltage. The device has a low gate charge (Qg) of 35nC at 10V and an input capacitance (Ciss) of 1090pF at 25V. With a maximum power dissipation of 44W (Tc) and an operating temperature range of -55°C to 150°C, the FQPF11N40C is suitable for applications in power supply, lighting, and motor control. It is packaged in a TO-220F-3 configuration.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 5.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 25 V |