FQPF10N60CT
MOSFET N-CH 600V 9.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF10N60CT is a QFET® series N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 9.5A at 25°C. With a maximum on-resistance (Rds On) of 730mOhm at 4.75A and 10V gate-source voltage, it offers efficient switching characteristics. The MOSFET utilizes Metal Oxide technology and is packaged in a TO-220F-3 through-hole configuration. Key parameters include a maximum gate charge (Qg) of 57 nC and input capacitance (Ciss) of 2040 pF. Its maximum power dissipation (Pd) is 50W (Tc). This device is suitable for use in power supply, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
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