FQPF10N60CF
MOSFET N-CH 600V 9A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF10N60CF is an N-Channel FRFET® MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 9 A at 25°C, with a maximum power dissipation of 50 W (Tc). Featuring a low on-resistance of 800 mOhm (Max) at 4.5 A and 10 V, it boasts a gate charge (Qg) of 57 nC (Max) at 10 V and an input capacitance (Ciss) of 2040 pF (Max) at 25 V. The TO-220F-3 package facilitates through-hole mounting. This MOSFET is suitable for use in power supply, lighting, and industrial automation sectors. It operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) tolerance of ±30V. The threshold voltage (Vgs(th)) is 4V (Max) at 250µA.
Additional Information
Series: FRFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
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