FQPF10N60C
MOSFET N-CH 600V 9.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® series FQPF10N60C is a 600V N-Channel Power MOSFET with a continuous drain current rating of 9.5A (Tc). This device features a low Rds(on) of 730mOhm at 4.75A and 10V Vgs, with a gate charge of 57 nC (max) at 10V. The input capacitance (Ciss) is 2040 pF (max) at 25V. Designed for through-hole mounting, it is housed in a TO-220F-3 package with a maximum power dissipation of 50W (Tc). The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |