FQPF10N50CF
MOSFET N-CH 500V 10A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF10N50CF is an N-Channel FRFET® MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 48W (Tc), it is suitable for demanding power conversion and control circuits. The Rds On specification is 610mOhm at 5A and 10V Vgs, and the device has a typical Gate Charge (Qg) of 56 nC at 10V. It is housed in a TO-220F-3 package, enabling through-hole mounting. This MOSFET is utilized across various industries including industrial power supplies, lighting, and renewable energy systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: FRFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 610mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2096 pF @ 25 V |
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