FQPF10N20C
MOSFET N-CH 200V 9.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® series FQPF10N20C is a 200V N-Channel Power MOSFET packaged in a TO-220F-3 through-hole configuration. It offers a continuous drain current of 9.5A (Tc) and a maximum power dissipation of 38W (Tc). Key electrical characteristics include a drain-source breakdown voltage (Vdss) of 200V, a maximum on-resistance (Rds On) of 360mOhm at 4.75A and 10V gate drive, and a typical gate charge (Qg) of 26nC at 10V. Input capacitance (Ciss) is specified at 510pF at 25V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |