FQPF10N20
MOSFET N-CH 200V 6.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF10N20 is a QFET® series N-Channel Power MOSFET designed for efficient switching applications. This component features a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 6.8A (Tc) at 25°C. With a low on-resistance of 360mOhm (Max) at 3.4A and 10V Vgs, it offers minimal conduction losses. The gate charge (Qg) is 18 nC (Max) at 10V, contributing to fast switching speeds. Housed in a TO-220F-3 package, the FQPF10N20 is suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Key applications include power supplies, motor control, and lighting systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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