FQP9N30
MOSFET N-CH 300V 9A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQP9N30 is a QFET® series N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 300 V and a continuous Drain Current (Id) of 9 A at 25°C, with a maximum power dissipation of 98 W. Key electrical specifications include a low on-resistance of 450 mOhm at 4.5 A and 10 V Vgs, and a gate charge (Qg) of 22 nC at 10 V. The input capacitance (Ciss) is 750 pF at 25 V. Operating across a temperature range of -55°C to 150°C, this MOSFET is housed in a standard TO-220-3 package. Its robust performance makes it suitable for use in power supply units, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 98W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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