FQP9N08L
MOSFET N-CH 80V 9.3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQP9N08L is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 9.3A at 25°C, with a maximum power dissipation of 40W. The TO-220-3 package facilitates through-hole mounting. Key electrical characteristics include a maximum Drain-Source On-Resistance (Rds On) of 210mOhm at 4.65A and 10V. Gate Charge (Qg) is specified at 6.1 nC maximum at 5V, and Input Capacitance (Ciss) is 280 pF maximum at 25V. This device is suitable for use in power supplies, motor control, and general-purpose switching applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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