FQP8P10
MOSFET P-CH 100V 8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQP8P10 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This TO-220-3 packaged component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 8 A at 25°C. With a maximum Power Dissipation of 65 W (Tc) and a low Rds On of 530 mOhm at 4 A, 10 V, it offers excellent conduction characteristics. The gate drive requirements are met with a typical Vgs(th) of 4V and a maximum gate-source voltage of ±30V. Key parameters include a Gate Charge (Qg) of 15 nC and Input Capacitance (Ciss) of 470 pF at 25 V. Operating across a junction temperature range of -55°C to 175°C, this device is suitable for use in industrial and automotive power management systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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