FQP7N80C
MOSFET N-CH 800V 6.6A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQP7N80C is an N-Channel QFET® Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 6.6A at 25°C (Tc). The Rds On (Max) is specified at 1.9 Ohms at 3.3A and 10V gate drive. With a maximum power dissipation of 167W (Tc), it is suitable for demanding power conversion and control circuits. The TO-220-3 package facilitates through-hole mounting. Key parameters include a Gate Charge (Qg) of 35 nC at 10V and Input Capacitance (Ciss) of 1680 pF at 25V. This device is commonly utilized in industrial power supplies, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |
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