FQP7N60
MOSFET N-CH 600V 7.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQP7N60 is a 600V N-Channel Power MOSFET designed for efficient power switching applications. This through-hole device, housed in a TO-220-3 package, offers a continuous drain current of 7.4A (Tc) and a maximum power dissipation of 142W (Tc). Key electrical parameters include a low Rds On of 1 Ohm (Max) at 3.7A, 10V and a gate charge of 38 nC (Max) at 10V. The input capacitance (Ciss) is specified at 1430 pF (Max) at 25V. Operating across a temperature range of -55°C to 150°C, the FQP7N60 is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 142W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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