FQP7N20L
MOSFET N-CH 200V 6.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQP7N20L is a QFET® series N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) capability of 6.5 A at 25°C, with a maximum power dissipation of 63 W (Tc). The on-resistance (Rds On) is specified at a maximum of 750 mOhm at 3.25 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 9 nC typical at 5 V Vgs and an Input Capacitance (Ciss) of 500 pF maximum at 25 V Vds. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 through-hole package. This MOSFET is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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