FQP7N10L
MOSFET N-CH 100V 7.3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQP7N10L is an N-Channel MOSFET from the QFET® series. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 7.3A at 25°C. Its low on-resistance is specified at 350mOhm maximum at 3.65A and 10V gate drive. The device supports gate drive voltages from 5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 6 nC maximum at 5V and input capacitance (Ciss) of 290 pF maximum at 25V. With a maximum power dissipation of 40W, this TO-220-3 package component is utilized in applications such as power supply units and motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V |
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